Activation of Fe Doping and Electrical Compensation in Semi-Insulating InP

1、

Doping and compensation in II VI semiconductors ①

Ⅱ-VI族半导体的掺杂与补偿

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2、

Finally HALL doping test on the material and substrate temperature were optimized.

最后用3ALL测试对材料的掺杂和衬底温度进行了优化。

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3、

For the lasers with symmetrical waveguide, the photon absorption of the non-active region material is proportional to the doping concentration of material, which causes serious absorption loss.

对称波导结构激光器中，非有源区材料对光子的吸收与其掺杂浓度成正比关系，吸收损耗比较严重。

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4、

Quantum Chemical Study on the Doping of Anode Material for Lithium-ion Battery and on the Reaction Mechanism of the Isomerization: HNC → HCN

锂离子电池掺杂正极材料的量化计算及氢氰酸协同反应机理研究

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5、

Neutron-transmutation doping for InP material

磷化铟材料的中子嬗变掺杂

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6、

The Quantum Chemical DV-X α Study on the Electronic Structure of Doping Cobalt Electrode Material for Lithium Ion Battery

锂离子电池掺钴正极材料电子结构的DV-Xα研究

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7、

Synthesis and Property of Al Doping Li-Ni-O Cathode Material for Li-ion Batteries

Al掺杂Li-Ni-O系列电池正极材料的制备与性能研究

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8、

The electron emission performance of liquid-liquid doping material was studied with emission surveyor designed in our laboratory. The effect of the doping method on the property and structure of tungsten cathode material was emphasized.

在自行设计的发射测量设备上，研究了液液掺杂材料的电子发射性能，着重阐述了掺杂方式对材料发射性能和结构的影响；

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9、

The sheet resistance of the films can be controlled by changing doping amount of F ions and choosing favorite process conditions, the minimum is 10 Ω/ □.

通过改变掺杂量和选择合适的工艺条件可控制掺氟SnO2薄膜的方块电阻，其最小方块电阻值达10Ω/□。

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10、

Firstly, high-quality a-Si films are prepared using PECVD. Resistivity of a-Si film is well controlled by gas doping.

论文首先研究了采用PECVD制备高品质a-Si薄膜的工艺，通过气相掺杂有效地调整了薄膜电阻率；

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11、

Controlled Synthesis and Doping of Single-Crystalline 6H-SiC Nanowire and Its Optic Properties

单晶6H-SiC纳米线的可控掺杂及光学特性

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12、

The structural transformation of the symmetric icosahedron is strongly related to the initial configuration, atomic number and atomic distribution, and can be controlled by doping hetero atoms and changing their compositions and distributions.

匀称的20面体结构转变与团簇的初始结构、原子数和组元分布密切相关。而且，这种相变可以通过不同物性组元的添加、含量和原子分布的改变进行控制。

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13、

The Curie temperature, coercivity and permeability can be controlled by doping barium ferrite with other elements. That enhanced the performance of barium ferrite.

利用不同的元素掺杂可以对钡铁氧体的居里温度、矫顽力、磁导率进行控制，从而提高钡铁氧体性能。

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14、

He performances and features of the impregnated cathode with alloy matrix, the impregnated cathode with controlled doping alloy film and the impregnated alloy matrix cathode with alloy film coating have been clearly reviewed in this paper.

明确地概述了合金基底浸渍阴极，可控合金浸渍阴极，覆合金膜浸渍合金基底阴极的性能和特征。

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15、

We have successfully developed a low noise high gain HFET with special doping profile sturcture and InGaAs/ GaAs two channels.

本文研究了具有InGaAs/GaAs双沟道和独特掺杂分布的低噪声高增益HFET。

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16、

An analytical breakdown model for thin epitaxial RESURF device with step doping profile drift is presented in this paper.

提出薄外延阶梯掺杂漂移区RESURF结构的耐压解析模型。

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17、

Doping Profile and I-V Characteristic Analysis for Hi-Lo GaAs IMPATT

GaAs高-低IMPATT二极管的掺杂分布和伏安特性分析

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18、

Study on Doping Profile of GaAs Epilayer

GaAs外延层掺杂分布的研究

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19、

A new design of channel doping profile, called SCD, is also discussed here in detail.

另外，还讨论了一种新型的沟道掺杂设计，命名为SCD。

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20、

An Analytical Model for Optimizing SOI High Voltage Device with Step Doping Profile in Drift Region

阶梯掺杂漂移区SOI高压器件浓度分布优化模型

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