CZ的例句大全

BAST-CZ s . r . o . deals in Objects , Manufacture as well as with installation.

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Tang, LJ ; Jia , CZ ; Jin, ZJ ; Chen, SP ; Pi, XJ ; Xie , HW.

汤良杰, 金之钧, 贾承造, 皮学军, 陈书平, 谢会文,王子煜.

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Roundtrip economy class air ticket between Hong Kong and Zhengzhou on CZ.

中国南方航空来回香港至郑州经济客位机票.

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CZ 02 The Code Template has been hidden by General Heinz.

CZ02密码模板由海因茨上将保管.

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CZ 2 Ceramic Cutting Machine is suitable for decoration companies, construction teams and stone processing factories.

CZ2瓷砖切机适用于各装修公司 、 施工队以及石材加工厂.

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Roundtrip Economy class air ticket for Hong Kong and Haikou on CZ ( E-Ticket ).

中国南方航空公司来回香港至海口经济客位机票(电子机票 ).

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The text describes the R & D process for 2 CZ 234 high current, small package rectifier module.

阐述了2CZ234型大电流小封装整流组件的研制过程.

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CZ-1200 percussion drill was developed to improve and perfect the performances and structures of CZ-22 cable percussion Rig used in diaphragm wall, bored pile and water well drilling engineering in China.

针对目前国内防渗墙、灌注桩桩孔施工及水井钻凿的主要设备CZ-22型钢绳冲击式钻机在使用过程中的一些不足之处，研制开发了CZ-1200型冲击钻机。

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The drawback of rotary piston vacuum pump in the vacuum system of Czochralski ( CZ) crystal grower is analyzed.

分析了采用滑阀式真空泵直拉单晶炉真空系统的缺点；

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The calculation formula for determination of nitrogen in CZ Si grown under nitrogen atmosphere by infrared absorption lines related to nitrogen at 963, 996, 1 018 and 1 027 cm-1 was given and the samples were measured with RSD 5%~ 20%.

提出了利用直拉硅中与氮有关的特征红外吸收峰963、996、1081－1及1027cm－1确定直拉硅中氮含量的计算公式，并进行了多种样品实测。

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The flow earth-tide has been observed with observational system consisting of LW-150 flow sensor and CZ-1002 digital recorder at Lujiang artesian well.

用LW150型涡轮流量变送器、CZ1002型数字记录仪组成的观测系统，在庐江台自流井进行了流量固体潮观测。

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This work was undertaken to study the properties of compounded rubber and vulcanizate of BIC ( sample Jin-20) by using two different vulcanization systems, ( CZ-S) and TMTD.

本文通过（CZ-S）和TMTD两种不同的硫化体系，研究了BIC（锦-20）的混炼胶和硫化胶性质。

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CZ-2E Ballistic Correction for High Altitude Wind

CZ-2E火箭高空风弹道修正

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Precipitation of oxygen and carbon in buk dislocation-free CZ Si annealed at450 ℃, 700 ℃ and 1050 ℃ has been studied using infrared absorption, X-ray topography, X-ray anomalous transmission, AES and HVTEM.

利用红外吸收、x射线形貌照相、x射线反常透射、俄歇电子能谱和高压透射电子显微镜研究了在450℃、700℃和1050℃热处理后无位错CZ-Si单晶中的氧、碳沉淀。

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Silicon single crystals are produced mainly by Czochralski method ( CZ) and magnetic field app-lied Czochralski method ( MCZ).

多晶硅用直拉法（CZ）或磁场直拉法（MCZ）拉制成单晶硅棒。

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Study on Cure Characteristics of DZ/ CZ Binary Accelerator System

促进剂DZ／CZ并用体系硫化特性的研究

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