1、

Electric and infrared absorption properties of LNO thin films prepared by RF-magnetron sputtering

LNO薄膜的射频磁控溅射制备及其电学性能与红外吸收性能

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2、

Our results showed that the LNO thin films could be used as bottom electrodes for integrated ferroelectric thin film devices.

结果表明,制得的LNO薄膜可用作集成铁电薄膜器件的底电极。

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3、

This can be explained by considering lattice mismatch and thermal stress between LNO thin films and Si substrates.

退火温度导致的薄膜不同择优取向可以用晶格失配关系和热应力来解释;

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4、

The electric property and structure of LNO film by different processes were studied, and the possible reasons for explaining these phenomena were presented.

系统研究了退火温度、退火时间、厚度等工艺条件对LNO薄膜电学特性和结构的影响,并进一步分析了产生这些现象的原因。

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