1、

Study on Doping Profile of GaAs Epilayer

GaAs外延层掺杂分布的研究

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2、

An analytical breakdown model for thin epitaxial RESURF device with step doping profile drift is presented in this paper.

提出薄外延阶梯掺杂漂移区RESURF结构的耐压解析模型。

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3、

Through improving road network inner structure, we can increase its outer function, and remit urban transportation conflict of supply and need.

通过改善道路网的内在结构来提高道路网的外延功能可以从根本上来缓解城市交通供需矛盾。

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4、

Criticisms of Situation Semantics on the Extensional Model Theory and the Possible World Semantics

情境语义学对外延模型论和可能世界语义学的批判

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5、

Barwise's criticisms on the extensional model theory semantics and the possible world semantics, not only reveals the shortages of logic semantics, but also helps us to understand the logic semantics problems of natural language more profoundly.

巴威斯等对外延模型论语义学和可能世界语义学的批判,揭示了既有逻辑语义研究的不足,促使人们对自然语言的逻辑语义问题进行更深刻的认识和反思。

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6、

In this paper, general semantics are formalized into 3 primary principals and 10 accidental principals and extensional tools, which are then analyzed comprehensively. Critical thinking and meaningful practice are done on the basis of the formalized thoughts and with reference to life experience.

本文将通用语义理论概括为3个大原则和10个相关的从属原则和外延性工具进行了深入分析,并且把这些思想和社会生活实践相结合,给出了严谨地思考和有益地尝试。

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7、

Demonstrate with typical examples, which essentially neither extension nor intension approach is considered more detail.

特别是,对在描述概念问题中不同于内涵和外延的第三种方法, 即典型示范表示做了进一步的分析.

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8、

The output properties of copper vapor laser ( CVL ) have been studied experimentally in this paper.

实验研究了外延腔铜蒸气激光器 ( CVL ) 的输出特性.

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9、

The eyebrows do not lie flat but, instead, arch up and out in a curve that lightly veils the eyes.

眉毛不能平躺着,但眉毛是以拱形向外延伸,呈优美的曲线,并遮盖住眼睛。

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10、
11、

Chromium oxide films grown by molecular beam epitaxy on MgO ( 001) substrates were characterized by x_ray diffraction ( XRD) and x_ray reflectivity ( XRR) measurements.

采用分子束外延技术(MBE)在MgO(001)基板上沉积了氧化铬薄膜,并利用x射线衍射(XRD)和x射线反射谱(XRR)对薄膜的晶体结构进行了表征。

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12、

The Preparation of GaAs VPE Multilayer Material with High Quality for GaAs MESFET Power Device

用于砷化镓功率MESFET器件的优质多层汽相外延材料的制备

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13、

Study of the Width of the Transition Region between GaAs Active and Buffer Layers Grown by VPE

GaAs气相双层外延层中有源层与缓冲层过渡区宽度的研究

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14、

Residual acceptor impurities in high purity LPE and VPE GaAs

高纯度砷化镓外延薄膜剩余受主杂质的研究

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15、

Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode.

采用直拉单晶硅片代替成本较高的外延硅片,采取铂扩散的方法引入复合中心,从而控制少子寿命以减少快恢复二极管的反向恢复时间。

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16、

The required thickness ( 0.6-0.8 μ m) of SOS film is deposited by the standard OVD method on the thin silicon layer.

3)再用通常CVD方法在带薄硅层上外延生长所需厚度(0.6~0.8μm)的SOS膜。

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17、

Realization of Precise Thermal Field in LPE System

液相外延系统中高指标热场的实现

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18、

The Growth of a New Type Magneto Optic Garnet Film by LPE

新型磁光石榴石薄膜的液相外延生长

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19、

Growth of Double n-layer LPE GaP

双n层GaP液相外延生长

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20、

The causes and control methods of the magnetic parameter drifts for magnetic bubble LPB garnet films are investigated.

本文研究了磁泡石榴石外延膜磁参数漂移的起因和抑制方法。

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