掺杂的例句大全

The quantitative theory of optimum doping content of electrical film materials was introduced in this paper.

从对电子薄膜材料研究中得到的最佳掺杂含量定量理论推广到ZnO陶瓷材料。

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In this paper, a two-way conduction mechanism in doped polyacetylene is proposed.

提出了一种掺杂聚乙炔的 双向 导电机理.

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Effect of Inorganic Anion Doping on the Photo-catalytic Property of TiO _ 2 Film and Infrared Spectrum Analysis.

无机阴离子掺杂TiO_2薄膜光催化性能及红外光谱分析.

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The key technique is precisely to control the doping element.

技术的关键在于掺杂精度的精确控制.

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Recent discoveries make the Mg-doped LnCoO 3 site become the hot point of researching.

近期的一些发现使得镧系轻元素钴酸盐的掺杂固溶体成为研究热点.

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The cerium doping Ru/ Al_2O_3 catalytic ozonation degradation of dimethyl phthalate

铈掺杂Ru/Al2O3催化臭氧氧化降解邻苯二甲酸二甲酯

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The effect of the ultraviolet-visible light transmittance, doping amount of thorium dioxide and neodymium sesquioxide, pH value of the aqueous solution of sodium dodecyl benzenesulfonate and some other factors on the photodegradation rate were studied.

研究了复合膜的紫外-可见光透过性能和二氧化钍与三氧化二钕的掺杂量、十二烷基苯磺酸钠水溶液的pH值等因素对光解率的影响。

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Chromium doped titanium dioxide Cr-TiO2 was prepared by the sol-gel method. The effects of annealing temperature on the crystal structure, oxidation states of chromium, and UV-vis absorption proper-ties of Cr-TiO2 were investigated in details.

采用溶胶-凝胶法制备了铬掺杂二氧化钛（Cr-TiO2），并对经过不同温度烧结的Cr-TiO2的结构、吸收光谱及样品中铬的氧化态等进行了表征。

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The charging and discharging result indicated that when the alloying element are many ( M: V ≥ 0.25:1.75), the material charging and discharging platform reduces, this causes the material the platform to be stable, which is advantageous in using for the battery charging and discharging.

充放电结果表明，当掺杂元素多时（M：V≥0.25：1.75），材料的充放电平台减少，这就使得材料的平台更加稳定，有利于用电池充放电，改善充放电效率。

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For the range of fluences studied, the observed effects result from a reduction in minority carrier lifetime in the IGBT and not from changes in the effective dopant density.

对于所研究的注量范围，所观察的效应是由于IGBT少子寿命减少造成的，而不是由于有效掺杂浓度变化所致。

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The RTP temperature, the RTP time, the cooling rate, the ambient and the dopant atoms influenced the density and distribution of point defects in wafers, and then affected oxygen precipitates.

快速热处理温度、时间、降温速度、退火气氛、掺杂原子等都对硅片中点缺陷的形成及分布产生影响，进而影响氧沉淀的形成。

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The effect of dopant on gas sensitive properties of α─ fe_2o_3 material

掺杂对α&Fe2O3材料气敏性能的影响

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Doping Profile and I-V Characteristic Analysis for Hi-Lo GaAs IMPATT

GaAs高-低IMPATT二极管的掺杂分布和伏安特性分析

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An Analytical Model for Optimizing SOI High Voltage Device with Step Doping Profile in Drift Region

阶梯掺杂漂移区SOI高压器件浓度分布优化模型

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A new design of channel doping profile, called SCD, is also discussed here in detail.

另外，还讨论了一种新型的沟道掺杂设计，命名为SCD。

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Study on Doping Profile of GaAs Epilayer

GaAs外延层掺杂分布的研究

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Boron diffusion in B-doped a-sic: h/ undoped a-si: h Heterojunctions

B掺杂a-SiC：H/本征a-Si：H异质结中的B扩散

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The Curie temperature, coercivity and permeability can be controlled by doping barium ferrite with other elements. That enhanced the performance of barium ferrite.

利用不同的元素掺杂可以对钡铁氧体的居里温度、矫顽力、磁导率进行控制，从而提高钡铁氧体性能。

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Measurement of the fine structure of semiconductor doping profile using C V technique

半导体掺杂分布精细结构的测量技术研究

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An analytical breakdown model for thin epitaxial RESURF device with step doping profile drift is presented in this paper.

提出薄外延阶梯掺杂漂移区RESURF结构的耐压解析模型。

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