Labeling were most heavily concentrated in the ipsilateral dorsolateral division of pontine nucleus and caudal region of parabigeminal nucleus.

In the pontine nucleus labeled terminal arborizations were found in its caudal 1/ 3, distributing in the paramedian nucleus, the dorsal part of peduncular nucleus and the dorsolateral nucleus.

在桥核中，标记终支见于其尾侧1/3，分布于其旁正中核、脚核之背侧部及背外侧核中。

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Many of these arteries are distributed over dorsolateral nucleus, ventral Fosterolateral nucleus and centromedian nucleus and a few over anterior nuclear group;

在动脉分布密度方面，丘脑前核群最少，而背外侧核、腹后外侧核、中央正中核最多。

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In the thoracic injection cases a group of labeled cells were discovered dorsolateral to the tract where only a few labeled ceils could be found in the cervical and lumbar cases.

胸髓注射例，在孤束之背外侧还有一群标记细胞。此处在颈、腰髓注射例仅有少数标记。

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In the transverse plane, entering the S_3& S_8spi hal cord, the labeled central processes of primary afferent neurons of the cloaca first appeared in the dorsolateral tract, and then divided into medial and lateral parts.

脊髓横断面观，被标记的初级传入神经元中枢突呈束状经背根外侧部进入S3&S8髓节的背外侧束，而后分成内外两部。

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Quality Control for Silicon Neutron Doping in SPRR-300

300~反应堆单晶硅掺杂质量控制

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The influence factors of LAPS characteristics such as silicon doping content, insulating layer thickness and light intensity are analyzed by means of circuit simulation method. The simulation results correctly reflect the reality characteristics of LAPS.

在此基础上，采用电路模拟方法仿真分析了影响LAPS特性的因素：硅掺杂浓度、绝缘层厚度以及光强等，仿真结果正确地反映了LAPS的实际特性。

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The concentration control of silicon doping in VB-GaAs monocrystal growth process was discussed. The modification to the factor of doping silicon into GaAs bulk was proposed.

结合VB-GaAs晶体生长工艺，对工艺中掺Si浓度的控制进行了探讨，提出了掺杂计算的修正因子。

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The oxygen parameter as well as the mean size of interstices of tetrahedral and octahedral also appears a certain influence of silicon doping.

掺入的Si~（4+）阳离子有很强的占据类尖晶石结构中四面体位的趋势，对氧参数及四面体位和八面体位的平均间隙大小也有一定影响。

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Influence of Silicon Doping on the Structure and the Magnetic Property of γ-Fe_2O_3 Particle

掺硅对γ-Fe2O3微粒的结构和磁性能的影响

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The paper gives a detailed account of various kinds factors which affect on NTD silicon doping precision on the basis of a great amount of experiments and measurements. It also gives some quantitative and qualitative results.

本文在大量实验测量的基础上，对影响NTD硅掺杂精度的因素作了较为详细的研究，给出了一些定量和定性的结果。

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Factors Affecting on NTD Silicon Doping Precision

影响NTD硅掺杂精度的因素

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Fazekas is the second athlete in two days to lose a gold medal for doping.

法泽卡斯是两天之内由于服用兴奋剂而被剥夺金牌的第二名运动员。

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Vacuum Ionic Plating Gold Doping Technology

真空离子掺金镀技术

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A novel structure of ideal ohmic contact p+ ( SiGeC)-n& n+ diodes with three-step graded doping concentration in the base region is presented, and the changing doping concentration gradient is also optimized.

将新器件结构与新型半导体材料相结合，提出了一种新型的n-区三层渐变掺杂理想欧姆接触型p+（SiGeC）-n&n+异质结功率二极管，并对n-区的杂质分布梯度进行了优化。

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By using the definition of effective doping concentration gradient and depletion approximation, an analytical solution for avalanche breakdown voltage of double sided asymmetric linearly graded junction has been derived.

通过有效掺杂浓度梯度的定义和耗尽近似求解，得到非对称线性缓变结击穿电压的简洁表达式。

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Study on the Al/ Ag doping functional gradient thin films deposited by pulsed excimer laser

脉冲激光沉积Al/Ag掺杂功能梯度薄膜

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However, as elevating doping gradient and reducing the medium thickness, the intensity of ASE effect will rises and depress the gain efficiency.

但是，随着掺杂浓度梯度的升高与介质片厚的降低，介质的增益水平将由于ASE效应降低。

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Computer simulation of the stationary domain in a Gunn diode with a positive doping gradient near the anode

Gunn器件中掺杂梯度引起的静止畴的计算机模拟

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Common donor dopants are Y 3+ and Nb 5+ Usually donor doped content lies in range from o 2 to 0 3 percent Factors influencing on the content are purity of used raw materials, flux for sintering, donor doping process and the others.

常用的施主加入物是Y3＋和Nb5＋，施主掺入量一般控制在x＝0.2%～0.3%为宜。影响施主掺入量的因素有原料纯度、烧结助剂、掺入施主的工艺等。

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The effects of donor doping amount, cooling conditions after sintering and oxidation temperatures on the semiconductivity of SrTiO_3 have been studied.

研究了施主掺杂量，烧成后的冷却条件、氧化温度对SrTiO3半导化的影响。

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