dielectric的例句大全

Dielectric relaxation spectral studies of three glassy formers

3种玻璃材料的介电弛豫谱

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According to the working principle of dielectric elastomer swinging actuator ( DESA), swinging actuator is designed and manufactured.

根据介电弹性体摆动驱动器的工作原理，设计了摆动驱动器。

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DAST is one kind of the most important materials in generating and detecting THz radiation for the reason that it has large optical nonlinear and electrooptic coefficients, low dielectric dispersion, large coherence length and ultra fast response time.

DAST因具有高的非线性和电光系数、低的介电常数、大的相干长度和快的响应时间等优点而在光整流法产生和探测THz波方面存在巨大应用潜力，目前对其研究较多。

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Many researches found that the complex Dielectric Parameters show a large fluctuation with the change of working wavelength; this will seriously affect the physical quantities such as Surface Plasmon propagation length.

物理实验研究发现，贵金属的复介电参数会随工作波长变化呈现出较大浮动，这对表面等离子体波传播长度等物理量的计算产生重要影响。

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The detection and power-up operation test of the earthing connection resistance test, the test and dielectric test of the insulating resistance.

接地连接电阻的检测、通电操作试验、绝缘电阻的测试、介电试验。

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But after reducing rated SF 6 gas pressure, the breaking and dielectric performance will be affected.

但是降低了额定SF6气体压力后, 将会影响到灭弧室的开断性能和绝缘性能.

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For example , 2, 6-Dinitrotoluene and 2, 4-Dinitrotoluene ( isomer ) are analysis by dielectric spectroscopy methods yielding excellent results.

以2, 4- 二硝基甲苯和2, 6- 二硝基甲苯 ( 分异构体 ) 介电波谱分析的示例, 得到了很好的结果.

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Energy band structures of different magnetic dielectric photonic crystals ( CD ) are calculated by finite-difference time-domain ( FDTD ) method.

利用时域有限差分(FDTD ) 法,计算了磁介质材料光子晶体 ( PC ) 的能带结构.结果表明,磁性散射也能形成光子禁带.

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Fabrication and characterization of Ta_2O_5 dielectric films by anodic oxidation

阳极氧化法制备Ta2O5绝缘膜及性能研究

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Imperfections in the board's dielectric properties can provide parasitic-leakage-current paths.

电路板介电性能的缺陷会给寄生漏电流提供路径.

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Measuring the Concentration and Viability of Beer Yeast by Dielectric Spectrum

用电容率频谱法测量啤酒酵母的浓度和活性

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A novel SOI high voltage device structure with a variable low k dielectric layer ( VLkD) is proposed. The buried layer is made up of dielectrics with variable k.

提出了一种可变低k（相对介电常数）介质层（variablelowkdielectriclayer，VLkD）SOI高压器件新结构，该结构的埋层由可变k的不同介质组成。

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Breakdown Characteristics of SOI LDMOS High Voltage Devices with Variable Low k Dielectric Layer

可变低k介质层SOI LDMOS高压器件的耐压特性

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The synthesis, structure, properties and process interaction of low k dielectrics are reviewed. Characterization techniques for low k dielectric films are summarized.

综述了低介电常数介质薄膜的制备方法、结构与性能表征、工艺兼容性等领域的最新进展。

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Gate Current for MOSFETs with High k Dielectric Materials Theoretical Modeling of Gate Current Distribution in MOSFET

高k栅介质MOSFET的栅电流模型（英文）MOSFET栅电流分布的理论建模

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Fabrication and Investigation of High K Gate Dielectric Materials for Next Generation MOSFET Applications

应用于下一代MOSFET中的高介电栅介质材料的研究

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The Growth and Properties of Tb-doped ZnO Films and High K Dielectric Er_2O_3 Films

Tb掺杂ZnO薄膜和高K栅介质Er2O3薄膜的制备及特性研究

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High k Gate Dielectric ZrO_2 Thin Films on SOI Substrate with Ultra-Thin Top Silicon

超薄顶层硅SOI衬底上高k栅介质ZrO2的性能

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High k Gate Dielectric Materials and Si Nanotransistor ( Continued)

高k栅极电介质材料与Si纳米晶体管（续）

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Fabrication of a RF MEMS Switch Using High k Materials as Dielectric Layer

高介电常数介质RF MEMS开关的制作研究

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