dopant的例句大全

Uses: As an activator of phosphor and dopant of garnet.

用途: 用于荧光粉的活化剂和柘榴石的添加剂.

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The promotion effect of lanthanide-dopant was briefly discussed.

作者主要讨论了掺杂的镧系元素的促进效应.

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Dopant distribution in LDD region is getting closer to substrate surface.

LDD区域中的杂质分布越来越靠近衬底表面.

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MBE does not require the extensive safety precautions , although solid arsenic dopant must be handled carefully.

和化学气相淀积工艺相反, 虽然在操作中对于固体砷还是必须非常小心掌握,但是,分子束外延不需要庞大的安定保险装置.

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Growth and characterization of low P dopant concentrations YP_xV_ ( 1-x) O_4 single crystal

低掺磷YP xV（1-x）O4单晶的生长与性能

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The inhibitory effects of nano-TiO_2 and Pt dopant nano-TiO_2 on the growth of Cyanobacteria were studied.

比较研究纳米TiO2和负载Pt纳米TiO2对蓝藻生长抑制的影响。

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The reason of the room-temperature resistivity decreasing distinctly is part of doping Cl element substituting O-site as donor dopant.

室温电阻率大幅降低的原因，是引入的Cl元素有一部分能进入晶格取代O位起施主作用。

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Based on the above factors, a new type of N-type dopant material is needed to avoid the above shortcomings.

基于上述因素，需研究一种N型掺杂剂材料以避免现有碱金属N型掺杂剂材料的缺点。

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Shallow Silicided Junctions Formed by Dopant Redistribution of As~+ and BF_2~+ Implanted into CoSi_2

CoSi2中As~+和BF2~+注入杂质再分布形成硅化物化浅结性能研究

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Exact 2-D Analytical Model of Ion Implanted Dopant Redistribution During Annealing

在退火过程中离子注入杂质再分布的二维精确解析模型

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Influence of Dopant on the Gas Sensing Property of CdSnO_3

掺杂对CdSnO3气敏性能的影响

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Effect of dopant on gas sensitivity of Fe_2O_ 3 nano powders

掺杂对Fe2O3纳米粉体气敏性的影响

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The effect of dopant on gas sensitive properties of α─ fe_2o_3 material

掺杂对α&Fe2O3材料气敏性能的影响

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The RTP temperature, the RTP time, the cooling rate, the ambient and the dopant atoms influenced the density and distribution of point defects in wafers, and then affected oxygen precipitates.

快速热处理温度、时间、降温速度、退火气氛、掺杂原子等都对硅片中点缺陷的形成及分布产生影响，进而影响氧沉淀的形成。

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For the range of fluences studied, the observed effects result from a reduction in minority carrier lifetime in the IGBT and not from changes in the effective dopant density.

对于所研究的注量范围，所观察的效应是由于IGBT少子寿命减少造成的，而不是由于有效掺杂浓度变化所致。

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The results show that with the increase of the boron dopant density, the potential windows of the electrodes become narrower and the background currents become larger.

结果表明，随着掺硼浓度的增加，电极的电势窗口略微变小，背景电流也随之变大。

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Typical of the dopant chemistry is the reaction for arsine, which is depicted with the deposition process in Fig. 9.

砷化三氢的反应是典型的掺杂化学反应，图9显示了该反应的淀积过程。

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