INP的例句大全

INP Grenoble Institut National Polytechnique de Grenoble.

国立园艺与风景规划学校.

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The resultsdemonstrat that three electron trape ( E _ c-0.17 eV , E _ c-0.23 eV, E _ c-0.39 eV ) produced inp ￣ + nn ￣ + structures are characterized by deep level transient spectroscopy.

还可引入三个缺陷能级:氧空位E_ 1(E_ c - 0.17ev) 、 双空位E_2 ( E_ c-0.23eV ) 和E_3(E_c-0.39eV).

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The PVS spectra for GaAs 、 InP 、 InGaAs 、 InGaAsP etc. are reported in this paper.

本文介绍了InP、InGaAs、InGaP、InGaAsP等 的光压港(PVS).

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In SiO 2 nanocables were discovered accidentally as we researched in InP nanowires growth.

二氧化矽包覆铟之一维奈米结构的发现,是在成长磷化铟奈米线之偶然情况下被合成出来的.

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Finally, discussed are etching mechanism, polishing principles, and control of reactive versions of the InP material.

文章最后讨论了InP材料的腐蚀机理 、 抛光原理及化学反应类型的控制.

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The microstructures of INP latex films were characterized by IR and transmission electron microscopy ( TEM ).

以红外光谱、透射 电子显微镜 表征互穿共聚物乳胶膜的微观结构.

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The normal and anormal temperature characteristice of photoluminescence spectrum for InP based multilayer heterostructure materials are reported in this paper.

本文报告了InP系列多薄层异质结构材料变温光致发光（PL）谱的正常及异常温度特性；

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Realization of InP-base Resonant Tunneling Diodes Through Air-bridge Technology

利用空气桥技术实现InP基共振遂穿二极管器件

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It is related to the formation of the ( GaP) 1/ ( InP) 1 single layer superlattice in the ordered alloy along [ 111] direction.

认为这与在有序合金中形成沿〔111〕方向的（GSP）1／（InP）1单层超晶格有一定联系。

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InGaAsP/ InP MQW Current-Controlled Bistable Lasers/ Nonlinear Switch Gates With Gain

InGaAsP／InP MQW电流控制型双稳／非线性增益开关激光器

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Investigation of Proton Bombardment Mask for InGaAsP/ InP PBH CCTS Bistable Lasers

InGaAsP/InP PBH双区共腔双稳激光器的H~+轰击掩膜研究

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Neutron-transmutation doping for InP material

磷化铟材料的中子嬗变掺杂

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Activation of Fe Doping and Electrical Compensation in Semi-Insulating InP

半绝缘InP的铁掺杂激活与电学补偿

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InGaAsP/ InP PBH Bistable Lasers with Low Threshold Current

低阈值InGaAsP/InP PBH双稳激光器

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