SI的例句大全

Influence of Fixed Charges Within Oxide on Field Emission From Si

氧化物中固定电荷对硅场致发射的影响

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Chemical Removal Process of A1 Si Coating

铝－硅涂层化学退除工艺的研究

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Determination of Si, Mn and P in Pig Iron by Spectro M8 Spectrum Instrument

Spectro M8型直读光谱仪分析生铁中硅、锰和磷

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Ma mamma e pap à cos ì non si pu � � , cos ì non va!

一只纯黄铜的浣熊和一条棉的蟒蛇.

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The several mathematical models of CEV, C %, Si % are established.

建立了CEV 、 C% 、 Si%的数学模型.

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Si , c 'è la luna , è li che sorride a noi.

还有月亮,在那里对着我们笑.

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Temperature field control model of laser crystallization of hydrogenated amorphous Si

氢化非晶硅激光结晶温场控制模型

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In this paper, deoxidation effect of Si-Al-Ba-Ca complex deoxidizer cored wire for 80t oxygen converter is analysed.

分析了80t氧气转炉应用Si-Al-Ba-Ca包芯线的脱氧效果，比较了用喂Al线和Ca Si线时对脱氧、钢质、工艺的影响。

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Trial production and application of AL-Si-Fe complex deoxidizer for steelmaking

炼钢复合脱氧剂铝硅铁合金试制与应用试验

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Yuan Si , Programming Structural Mechanics, Higher Education Press, 2001.

袁驷, 程序结构力学, 高等教育出版社, 2001.

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Mr. Lv Si-mian's lifetime could be attributed to be diligent in writing, and tireless in teaching.

吕思勉先生的一生,勤奋著述, 诲人不倦.

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Polycrystalline silicon film obtained by solid-phase crystallization of a-Si: H film A study of poly-silicon fims prepared by hydrogen plasma heating

a-Si∶H薄膜固相晶化法制备多晶硅薄膜氢等离子体加热法晶化a-Si∶H薄膜

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The deep trap center of AlN grown on Si substrate is investigated with PL spectra and Raman spectra.

表征陷阱材料的主要物理量是陷阱深度，准确计算出陷阱深度对于研究陷阱材料具有重要的意义。

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There was a marked correlation between SI, CI, and EDVI.

SI及CI与EDVI呈直线正相关。

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To improve EGCS and enlarge the application of SI, this paper deeply discusses and researches the scheduling strategy based on particle swarm intelligent algorithm.

本文以电梯群控系统为研究对象，以提高电梯群控系统的智能化水平和扩大粒子群群智能算法的应用为目的，对粒子群算法在电梯群控系统调度中的应用进行了深入的分析与研究。

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The adding of Si can enhance the structure ordering in IPF.

在TX203絮凝剂中Si有增强结构序性的作用。

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Various English Versions of the Poem Jing Ye Si: Comparison and Comments

《静夜思》的英译比较与评论

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TheeffectofagingtemperatureontherecoverystressofFe-1 8 Mn-5 Si-8 Cr-4 Ni-0. 2 Cshapememoryalloyhasbeenstud ied.

研究了时效温度对Fe-14Mn-5Si-8Cr-4Ni-0.2C记忆合金回复应力的影响.

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The samples were deposited on c-Si substrates by glow discharge inH _ 2 and SiCl _ 4 mixture.

样品是在H_ 2和SiCl_4混合气体中用辉光放电方法淀积在晶体硅(c-Si)衬底上的.

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Si se comprobare la intervenci � � n de un oferente inh á bil , é ste quedar á eliminado del respectivo proceso precontractual.

直接参与与签署合同有关的前期合同文件的制定、修改或审批的人员.

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