1、
The stoichiometry of the material cannot be readily adjusted as is the case with VPE.
材料的化学比不象VPE法一样容易进行调节。
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2、
The Preparation of GaAs VPE Multilayer Material with High Quality for GaAs MESFET Power Device
用于砷化镓功率MESFET器件的优质多层汽相外延材料的制备
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3、
Study of the Width of the Transition Region between GaAs Active and Buffer Layers Grown by VPE
GaAs气相双层外延层中有源层与缓冲层过渡区宽度的研究
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4、
5、
Also, members on the schedule must confirm their participation to the VPE and Toastmaster.
在议程上有任务的会员，必须要与教育副会长及例会总主持人做确认。
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