DIBL

The DMG structure coupling with the insulator halo, the threshold voltage roll-off and drain-induced-barrier-lowering ( DIBL) decrease and the sub-threshold characteristics have been improved.

由于DMG结构和介质Halo的相互耦合，阈值电压漂移和漏致势垒降低（DIBL：Drain-Induced-Barrier-Lowering）减小，亚阈值特性得到改善。

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The surface potential model in the deep submicrometer FD device is presented by introducting some new parameters to describe the DIBL effect.

通过引入新的参数，对公式进行修正，建立深亚微米全耗尽器件的表面势模型，能够很好地描述漏感应势垒降低效应。

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Furthermore, the impacts of the drain voltage is introduced in the model to include the drain induction barrier lower ( DIBL).

此外，还考虑了漏电压的影响，并对阈值电压的解析模型进行了修正，重点研究了漏致势垒降低效应（DIBL）。

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Compared with the traditional planar MOSFET's, MOSFET's with novel structures have better performance, such as improved SCE, ideal DIBL and sub-threshold slope, as well as higher driving ability.

和传统平面结构MOSFET相比，新结构MOSFET具有更好的性能（如改善的沟道效应（SCE），理想的漏诱生势垒降低效应（DIBL）和亚阈值特性）和更大的驱动电流等。

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The subthreshold slope is 69mV/ decade, and it almost has no DIBL effect.

其亚阈值斜率只有69mV/decade，而且几乎没有DIBL效应。

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We discussed the influence of channel-length modulation effect and DIBL effect to temperature behavior of source-drain current, gave a expressions for studying the temperature characteristic of source-drain current, and deduced a ZTC point expression.

研究了沟长调制效应和漏致势垒降低效应对漏源电流温度特性的影响，给出了一个用于研究漏源电流温度特性的电流公式；

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A threshold voltage model for short-channel MOSFET is developed by solving a 2-D Possion's equation. The derived DIBL factor can be used to analysis the influence of the parameters on short-channel effects.

通过求解二维泊松方程推导了一个简洁的短沟道MOS的阈值电压模型，得到的DIBL因子可用于分析参数对短沟道效应的影响。

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